Intel and Micron’s
64Gb, 20nm NAND flash? Old news. It’s now in mass production. Today,
Micron revealed the two companies’ hottest new collaboration, a 128Gb,
20nm NAND flash device. The little thing crams 1Tb of storage onto eight
die for a total package that’s roughly the size of a fingernail.
The new device, which is designed to provide flash storage to mobile
devices and high-capacity SSDs alike, can hit 333 megatransfers per
second (MT/s).
The dramatic increase in density is enabled by the planar cell structure
technology used on the 20nm NAND, which gets around scaling issues by
incorporating a Hi-K/metal gate stack.
Intel, Micron Extend NAND Flash
Technology Leadership With Introduction of World's First 128Gb NAND
Device and Mass Production of 64Gb 20nm NAND
New 128Gb Device Ideal for Small Form Factor Tablets, Smartphones, SSDs and High-Performance Compute Devices
SANTA CLARA, Calif. and BOISE, Idaho, Dec. 6, 2011 (GLOBE NEWSWIRE) --
Intel Corporation and Micron Technology, Inc., (Nasdaq:MU) today
announced a new benchmark in NAND flash technology — the world's first
20 nanometer (nm), 128 gigabit (Gb), multilevel-cell (MLC) device. The
companies also announced mass production of their 64Gb 20nm NAND, which
further extends the companies' leadership in NAND process technology.
Developed through Intel and Micron's joint-development venture, IM Flash
Technologies (IMFT), the new 20nm monolithic 128Gb device is the first
in the industry to enable a terabit (Tb) of data storage in a
fingertip-size package by using just eight die. It also provides twice
the storage capacity and performance of the companies' existing 20nm
64Gb NAND device. The 128Gb device meets the high-speed ONFI 3.0
specification to achieve speeds of 333 megatransfers per second (MT/s),
providing customers with a more cost-effective solid-state storage
solution for today's slim, sleek product designs, including tablets,
smartphones and high-capacity solid-state drives (SSDs.)
"As portable devices get smaller and sleeker, and server demands
increase, our customers look to Micron for innovative new storage
technologies and system solutions that meet these challenges," said Glen
Hawk, vice president of Micron's NAND Solutions Group. "Our
collaboration with Intel continues to deliver leading NAND technologies
and expertise that are critical to building those systems."
The companies also revealed that the key to their success with 20nm
process technology is due to an innovative new cell structure that
enables more aggressive cell scaling than conventional architectures.
Their 20nm NAND uses a planar cell structure — the first in the industry
— to overcome the inherent difficulties that accompany advanced process
technology, enabling performance and reliability on par with the
previous generation. The planar cell structure successfully breaks the
scaling constraints of the standard NAND floating gate cell by
integrating the first Hi-K/metal gate stack on NAND production.
"It is gratifying to see the continued NAND leadership from the
Intel-Micron joint development with yet more firsts as our manufacturing
teams deliver these high-density, low-cost, compute-quality 20nm NAND
devices," said Rob Crooke, Intel vice president and general manager of
Intel's Non-Volatile Memory Solutions Group. "Through the utilization of
planar cell structure and Hi-K/Metal gate stack, IMFT continues to
advance the technological capabilities of our NAND flash memory
solutions to enable exciting new products, services and form factors."
The demand for high-capacity NAND flash devices is driven by three
interconnected market trends: data storage growth, the shift to the
cloud and the proliferation of portable devices. As digital content
continues to grow, users expect that data to be available across a
multitude of devices, all synchronized via the cloud. To effectively
stream data, servers require high-performance, high-capacity storage
that NAND delivers, and storage in mobile devices has consistently grown
with increased access to data. High-definition video is one example of
an application that requires high-capacity storage, since attempting to
stream this type of data can create a poor user experience. These
developments create great opportunities for high-performance,
small-footprint storage, both in the mobile devices that consume the
content and the storage servers that deliver it.
Intel and Micron noted that the December production ramp of their 20nm
64Gb NAND flash product will enable a rapid transition to the 128Gb
device in 2012. Samples of the 128Gb device will be available in
January, closely followed by mass production in the first half of 2012.
Achievement of this milestone will further enable greater densities and
overall fab output, while also helping the companies' development teams
cultivate the expertise required to design complex storage solutions and
refine future technologies.